发明名称 Photo-semiconductor device and method of manufacturing the same
摘要 A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.
申请公布号 US7615787(B2) 申请公布日期 2009.11.10
申请号 US20050087747 申请日期 2005.03.24
申请人 CANON KABUSHIKI KAISHA 发明人 OUCHI TOSHIHIKO
分类号 H01L31/0256;G01N21/35;H01L21/00;H01L21/44;H01L21/48 主分类号 H01L31/0256
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