| 发明名称 |
Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television device |
| 摘要 |
A method for forming a pattern according to the invention comprises the steps of: forming a mask over a substrate having light-transmitting properties; forming a first region having a substance including a light-absorbing material over the substrate and the mask; forming a second region by irradiating the substance with light having a wavelength which is absorbable by the light-absorbing material through the substrate to modify a part of the substance surface; and forming a pattern by discharging a compound including a pattern forming material to the second region.
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| 申请公布号 |
US7615488(B2) |
申请公布日期 |
2009.11.10 |
| 申请号 |
US20050574616 |
申请日期 |
2005.03.16 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MAEKAWA SHINJI;FUJII GEN;YAMAMOTO HIROKO |
| 分类号 |
H01L21/44;G02F1/13;G02F1/1368;G03F7/20;G09F9/00;H01L21/288;H01L21/336;H01L21/768;H01L21/77;H01L21/8234;H01L21/8238;H01L21/84;H01L27/088;H01L27/092;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L21/44 |
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