发明名称 |
Super leakage current cut-off device for ternary content addressable memory |
摘要 |
A super leakage current cut-off device for a ternary content addressable memory (TCAM) is provided. For various operations of the TCAM, the device uses the high-end and low-end power gating control transistors to turn on/off the don't-care cells to reduce the leakage current passing through the don't-care cells.
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申请公布号 |
US7616469(B2) |
申请公布日期 |
2009.11.10 |
申请号 |
US20080007824 |
申请日期 |
2008.01.16 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
HUANG PO-TSANG;LIU WEN-YEN;HWANG WEI |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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