| 摘要 |
FIELD: electricity. ^ SUBSTANCE: invention may be used for mixing of signals in radio engineering and radio measurement equipment, and in microelectromechanical systems. In nanoelectronics semiconductor diode, comprising two contact areas made of alloyed GaAs, spacers made of GaAs, and heterostructure made of three alternating areas: potential barriers made of AlyGa1-yAs, where y is a molar fraction of Al, and a potential pit arranged in between, differing with a width of prohibited area and layer thickness, potential pit is made of GaAs, and when Si concentration in contact areas makes 1x1018-3x1018 l/cm3, thickness of pit layer amounts from 11 to 20 atomic layers, molar fraction of Al in barrier layers makes from 0.4 to 1, barrier thickness makes from 6 to 30 atomic layers. ^ EFFECT: invention makes it possible to provide for creation of a mixer diode with a current-voltage characteristic shape aimed at widening of working band of frequencies with simultaneous increase of dynamic range and reduction of losses of mixer transformation. ^ 2 dwg |
