Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry

摘要

A device and method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.