| 摘要 |
<p>The invention pertains to a photovoltaic (PV) module comprising a plurality of cells, each cell containing a substrate, a transparent conductor layer, a photovoltaic layer, and a back-electrode layer, wherein the photovoltaic layer comprises at least one p-i-n or n-i-p silicon layer, characterized in that said silicon layer comprises 10 to 1000 conducting spots of recrystallized silicon per cm2, each having independently a surface or 10 to 2500 μm2. The PV module can be obtained by a method wherein the p-i-n or n-i-p silicon layer is locally heated whereby said silicon is transformed at these spots, after which the silicon at these spots is allowed to solidify in a transformed dtate.</p> |
