发明名称 Versatile system for optimizing current gain in bipolar transistor structures
摘要 Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406) are determined. A required electrical contact area is determined based on the required current density, and the electrical contact structure is then designed to minimize the required electrical contact area with respect to the emitter structure area.
申请公布号 US7615805(B2) 申请公布日期 2009.11.10
申请号 US20070745906 申请日期 2007.05.08
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TROGOLO JOE R.;CHATTERJEE TATHAGATA;SPRINGER LILY X.;SMITH JEFFREY P.
分类号 H01L31/0328;H01L21/331;H01L21/8249;H01L29/08 主分类号 H01L31/0328
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