| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce current consumption of a semiconductor memory device by controlling the amount of current flowing from an internal circuit to a ground line. CONSTITUTION: An internal circuit(100) is driven with the current flowing between a first voltage node and a second voltage node. A current controller(200) includes first to third switches(210-230). The current controller controls the amount of current in response to the operation speed information signal. The first switch applies the external voltage to the first voltage node in response to the operation speed information signal. The second switch applies the external voltage to the second voltage node in response to the operation speed information signal. The selectively turned-on transistor among the plurality of transistors is operated as the switch in response to the operation speed information signal.
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