POLISHING LIQUID FOR METAL, AND POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a metal-polishing liquid which ensures high CMP speed and has less dishing to improve the planarity of a polished surface, and to provide a polishing method.

SOLUTION: The metal-polishing liquid contains: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid. The metal-polishing liquid is used for chemically and mechanically polishing a conductor film consisting of copper or a copper alloy in a production process of a semiconductor device.

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