NON-POLAR a-PLANE GALLIUM NITRIDE THIN FILM GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide an improved method of growing films that exhibit improved surface and structural quality.

SOLUTION: The invention describes a method for growing non-polar a-plane gallium nitride thin films by metal organic chemical vapor deposition on an r-plane substrate. The method includes the processes of: (a) annealing the substrate; (b) depositing a nuclear generation layer of a nitride base on the substrate; (c) growing the non-polar a-plane gallium nitride film on the nuclear generation layer; and (d) cooling the non-polar a-plane gallium nitride film under excess pressure of nitrogen.

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