发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having a vertical wiring structure which is desirable for fine-pitch arrangements. SOLUTION: The semiconductor integrated circuit device includes: a semiconductor substrate on which a circuit is formed; functional device arrays in which multi-layer lamination is carried out on the semiconductor substrate; and vertical wirings for connecting signal lines of the functional device arrays to the circuit on the semiconductor substrate, wherein the vertical wirings are constituted as a pile structure of metal layers which are dispersively arranged in the longitudinal direction of a stripe-shaped groove of an insulating layer after forming the stripe-shaped groove. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009260060(A) 申请公布日期 2009.11.05
申请号 JP20080107773 申请日期 2008.04.17
申请人 TOSHIBA CORP 发明人 TODA HARUKI;NARA AKIKO
分类号 H01L21/768;H01L21/82;H01L23/522;H01L27/10 主分类号 H01L21/768
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