发明名称 METHODS AND APPARATUS FOR WAFER AREA PRESSURE CONTROL IN AN ADJUSTABLE GAP PLASMA CHAMBER
摘要 In a plasma processing chamber, a method and an arrangement to stabilize pressure are provided. The method includes providing coarse pressure adjustments in an open-loop manner and thereafter providing fine pressure adjustments in a closed-loop manner. The coarse pressure adjustments are performed by rapidly re-position confinement rings employing an assumed linear relationship between the conductance and the confinement rings position to bring the pressure in the plasma generating region quickly to roughly a desired set point. The fine pressure adjustments are performed by at least employing mechanical vacuum pump(s), turbo pump(s), confinement ring positioning and/or combinations thereof to achieve a derive pressure set point.
申请公布号 WO2009100345(A3) 申请公布日期 2009.11.05
申请号 WO2009US33410 申请日期 2009.02.06
申请人 LAM RESEARCH CORPORATION;DHINDSA, RAJINDER;ROGERS, JAMES H. 发明人 DHINDSA, RAJINDER;ROGERS, JAMES H.
分类号 H05H1/34;H05H1/36 主分类号 H05H1/34
代理机构 代理人
主权项
地址