| 摘要 |
PROBLEM TO BE SOLVED: To provide a device having an electrostatic attraction function of: reducing device breakage failure induced by leakage current; and preventing the occurrence of troubles such as deviation and cracking of a wafer by residual attraction force. SOLUTION: The device is designed such that the leakage current flowing in an attracted sample when an electrostatic attraction voltage is applied is reduced to 0.1-15μA/cm2 in unit area of the attracted sample and more preferably is designed such that the ratio of leakage current between electrostatic attraction electrodes flowing in an insulating layer to the leakage current flowing in the attracted sample when the electrostatic attraction voltage is applied is 0.1 or more. By designing the device, there can be provided the device having the electrostatic attraction function of: reducing the device breakage failure induced by the leakage current; and preventing the occurrence of troubles such as deviation and cracking of the wafer by the residual attraction force. COPYRIGHT: (C)2010,JPO&INPIT |
