| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which can prevent grain boundaries from being formed in a channel forming region of a TFT and which can avoid substantial reduction in TFT mobility, reduction in on current, and increase in off current due to the grain boundaries. SOLUTION: The semiconductor device includes: a semiconductor film including a source region and a drain region; a first insulating film provided in contact with a side face of the semiconductor film; a second insulating film provided on the semiconductor film and first insulating film, a gate electrode provided on the second insulating film; a third insulating film provided on the gate electrode; an aperture formed in the second insulating film and third insulating film to expose part of the semiconductor film and part of the first insulating film; and a wiring or electrode electrically connected to the semiconductor film through the opening. The first insulating film is partially etched at a part coming into contact with the side face of the semiconductor film to be hollowed, and the wiring or electrode enters the hollowed portion of the first insulating film. COPYRIGHT: (C)2010,JPO&INPIT |
