| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive powder, capable of achieving both of reduction of polishing scratch and prominent polishing speed with sufficient high level in CMP (chemical mechanical polishing) technology for polishing a film formed on a substrate, and to provide a substrate polishing method employing the abrasive powder as well as a solution and slurry employed for the polishing method. <P>SOLUTION: The abrasive powder contains water, cerium oxide grain and additive, and the additive contains compound shown by a general formula (I) or a polymer having the compound as a monomeric unit. In this case, R<SP>1</SP>-R<SP>5</SP>in the general formula (I) show respectively and independently monovalent organic group or hydrogen atom which may have substituent while X<SP>1</SP>and X<SP>2</SP>show respectively and independently divalent organic group which may have substituent. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
