| 摘要 |
PROBLEM TO BE SOLVED: To solve conventional various problems and provide an inexpensive DRAM by introducing a new selection method of memory cell, and further to contribute to getting a high performance of other DRAM cells or static random access memory (SRAM) by this selection method. SOLUTION: The memory cells MC are connected to intersected points between row lines X and column lines Y which constitute an array, and the one memory cell is controlled by the row line X and column line Y, and the memory cell MC is selected by such a manner that a pulse voltage is applied respectively to the row line X and column line Y, and a signal transfer is carried out with a data line DL. COPYRIGHT: (C)2010,JPO&INPIT
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