| 摘要 |
The invention relates to the fabrication of an electronic component having a very high integration density, notably an image sensor. The component comprises two, superposed integrated circuits, one of which one (the image sensor) is formed on the front side of a thinned first silicon substrate (12) and the other of which is produced on the front side of a second substrate (30), with an insulating planarization layer (28, 48) interposed between the front sides of the two substrates. The silicon (12) of the backside of the thinned substrate is opened locally above a first conducting area (P1) located in the thinned substrate and above a second conducting area (P2) located in the second substrate. A conducting layer portion (50), deposited on both areas, electrically connects them so as to provide the interconnection between the two circuits. The external connection pads (PL1) may also be formed in this conducting layer (50).
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