发明名称 High Density Memory Device Manufacturing Using Isolated Step Pads
摘要 An electronic device includes multiple IC dies stacked in an offset stacking arrangement on a substrate. Each IC die includes electrically isolated step pads that facilitates transmitting a dedicated signal between a (beginning) substrate bonding pad and a selected (terminal) contact pad of any die by way of short bonding wires that extend up the stack between the electrically isolated step pads. A memory devices includes stacked memory IC die, wherein "shared" signal transmission paths are formed by associated bonding wires that link corresponding contact pads of each memory die, and dedicated select/control signals are transmitted to each memory die by separate transmission paths formed in part by associated electrically isolated step pads. Substrate space overhung by the stack is used for passive components and IC dies. Memory controller die may be mounted on the stack and connected by dedicated transmission paths utilizing the electrically isolated step pads.
申请公布号 US2009273096(A1) 申请公布日期 2009.11.05
申请号 US20080115482 申请日期 2008.05.05
申请人 SUPER TALENT ELECTRONICS, INC. 发明人 HIEW SIEW S.;NAN NAN;MA ABRAHAM C.
分类号 H01L23/49;H01L21/56 主分类号 H01L23/49
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