发明名称 CHARGED-PARTICLE BEAM WRITING METHOD AND CHARGED-PARTICLE BEAM WRITING APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a charged-particle beam writing method and a charged-particle beam writing apparatus capable of calculating a distribution of a beam position shift amount due to a charging effect with satisfactory accuracy. <P>SOLUTION: A pattern density distributionρ(x, y) and a dose amount distribution D(x, y) calculated by using the pattern density distributionρ(x, y) are multiplied to calculate an irradiation amount distribution E(x, y) (S104). A fogging electron amount distribution F(x, y,σ) is calculated by using the irradiation amount distribution E(x, y) and a function g(x, y) describing a fogging spread distribution (S106). A charge amount distribution C(x, y) in an irradiation region and a non-irradiation region is calculated by using the irradiation amount distribution E(x, y) and the fogging electron amount distribution F(x, y,σ) (S108). A position shift amount distribution p(x, y) is calculated by using the charge amount distribution C(x, y) and a response function r(x, y) for converting a charge amount into a position shift error (S110). <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009260250(A) 申请公布日期 2009.11.05
申请号 JP20080331585 申请日期 2008.12.25
申请人 NUFLARE TECHNOLOGY INC 发明人 NAKAYAMADA KENSHO;WAKE SEIJI
分类号 H01L21/027;G03F1/76;G03F1/78;G03F7/20 主分类号 H01L21/027
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