| 摘要 |
<P>PROBLEM TO BE SOLVED: To connect a deep layer and a base layer so that the deep layer can be surely deeper than a trench, in a method for manufacturing an SiC semiconductor device so that an electrical field concentration in a gate oxide film formed in the trench can be further relaxed. Ž<P>SOLUTION: A p-type deep layer 10 is divided into a lower layer part 10a and an upper layer part 10b, and they are formed by twice an ion implantation. This can form the p-type deep layer 10, which is deeper as compared to forming it at a single setting. In addition, increase in the energy is not required at the ion implantation eliminates the need for providing an ion implantation device, capable of conducting the ion injection with enormous energy. Furthermore, the p-type deep layer 10 can be formed deeper so as to enable formation of the position of the bottom part of the p-type deep layer 10 to be surely deeper than the position of the bottom of the trench 6, which does not require control of the difficult trench depth. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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