| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device preventing incidence of an infrared ray from a wiring layer-side on a photoelectric conversion device. Ž<P>SOLUTION: The solid-state imaging device includes: a semiconductor substrate having a light receiving face on one face; a wiring layer arranged on the other face of the semiconductor substrate; an imaging pixel part disposed between the light receiving face and the wiring layer; and a peripheral circuit part installed on the other face-side of the semiconductor substrate, which is at a periphery of the imaging pixel part. The imaging pixel part includes: a plurality of photoelectric conversion devices arranged in a two-dimensional array shape; a device separating layer dividing the photoelectric conversion device at every pixel; and an infrared ray cut filter film or a shielding film which is partially installed between the photoelectric conversion device and the wiring layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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