| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thermal processing method and a thermal processing device capable of both activating an implanted ion with no damage to a substrate, and recovering introduced defects. <P>SOLUTION: Optical radiation heating in which the total time duration of optical radiation is 1 second or less is executed in two-step radiation comprising a first step in which a semiconductor wafer is irradiated with light at such an output waveform that a peak is a light emission output LP, and a second step in which, after the peak passes, the semiconductor wafer W is additionally radiated with light at the light emission output which is lower than the light emission output LP. The light emission output at the second step is two thirds or smaller that the light emission output LP at the peak. The duration of optical radiation in the first step is 0.1-10 ms while the second step is 5 ms or longer. While the surface temperature of the semiconductor wafer is kept at an almost constant processing temperature T2, also a temperature at a position slightly deeper from the surface is raised by some extent. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
