| 摘要 |
A semiconductor wafer implanted with impurities is loaded into a chamber. After oxygen gas is introduced around the semiconductor wafer, the semiconductor wafer is irradiated with a flash of light from flash lamps for an irradiation time not shorter than 0.1 milliseconds and not longer than 100 milliseconds, to thereby momentarily raise the surface temperature of the semiconductor wafer up to not lower than 800° C. and not higher than 1300° C. Since the temperature rises in an extremely short time, it is possible to activate the impurities while suppressing thermal diffusion thereof. Further, since an extremely thin oxide film is formed on a surface of the semiconductor wafer, this film serves as a protection film in a subsequent cleaning process, to prevent removal of the impurities.
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