发明名称 Semiconductor Apparatus Using Back-Side High-Withstand-Voltage Integrated Circuit
摘要 <p>A semiconductor apparatus includes an electroconductive member; a switching device electrically connected to the electroconductive member on the electroconductive member and having a withstand voltage between a front side and a back side as a first withstand voltage; a back-side high-withstand-voltage integrated circuit provided on the electroconductive member separately from the switching device, incorporating a control circuit for controlling turning-on/off of the switching device, and having a withstand voltage between a front side and a back side as a second withstand voltage higher than the first withstand voltage; an insulating substrate provided on the electroconductive member separately from the switching device and the back-side high-withstand-voltage integrated circuit; input/output wiring connected to the insulating substrate; first wiring connecting the insulating substrate and the switching device; and second wiring connecting the insulating substrate and back-side high-withstand-voltage integrated circuit.</p>
申请公布号 KR100924742(B1) 申请公布日期 2009.11.05
申请号 KR20070098591 申请日期 2007.10.01
申请人 发明人
分类号 H01L29/78;H01L21/06;H01L21/822 主分类号 H01L29/78
代理机构 代理人
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