| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high quality single crystal silicon particles; and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the single crystal silicon particles includes a first process for forming a silicon nitride film on the surface layer part of each crystal silicon particle 101 and a second process comprising: converting the silicon nitride film into a silicon oxynitride film by heating the crystal silicon particles 101 in an atmosphere composed of oxygen gas or oxygen gas and an inert gas; at the same time, melting the silicon part in a state that the shape of the crystal silicon particles 101 is kept while forming a high concentration layer of nitrogen at the inner surface of the silicon oxynitride film, brought into contact with the silicon part of each crystal silicon particle 101; and then converting the molten silicon part into a single crystal silicon part by lowering the temperature so as to solidify the molten silicon part. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
