发明名称 |
Infrared detector, infrared detecting apparatus, and method of manufacturing infrared detector |
摘要 |
An infrared detector comprises: a reflection portion transmitting far- and middle-infrared rays and reflecting near-infrared and visible rays; a photo-current generating portion having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion are injected and the electrons thus injected thereinto are recombined with holes, thus emitting near-infrared and visible rays; and a photo-detecting portion detecting the near-infrared and visible rays emitted from the light emitting portion, and detecting the near-infrared and visible rays emitted from the light emitting portion and reflected by the reflection portion. The reflection portion, the photo-current generating portion, and the light emitting portion are made of group III-V compound semiconductors layered on a semiconductor substrate.
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申请公布号 |
US2009272903(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20090320564 |
申请日期 |
2009.01.29 |
申请人 |
KATO MASAHIRO;MASUKAWA KAZUNORI;WATANABE YO;YAMAGUCHI MASAHITO;TANI KOICHI |
发明人 |
KATO MASAHIRO;MASUKAWA KAZUNORI;WATANABE YO;YAMAGUCHI MASAHITO;TANI KOICHI |
分类号 |
H01L27/14;H01L21/02 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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