发明名称 |
Selective High-K dielectric film deposition for semiconductor device |
摘要 |
Embodiments of the present invention describe a method of fabricating a III-V quantum well transistor with low current leakage and high on-to-off current ratio. A hydrophobic mask having an opening is formed on a semiconductor film. The opening exposes a portion on the semiconductor film where a dielectric layer is desired to be formed. A hydrophilic surface is formed on the exposed portion of the semiconductor film. A dielectric layer is then formed on the hydrophilic surface by using an atomic layer deposition process. A metal layer is deposited on the dielectric layer.
|
申请公布号 |
US2009272965(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20080150898 |
申请日期 |
2008.04.30 |
申请人 |
RACHMADY WILLY;RADOSAVLJEVIC MARKO;HUDAIT MANTU K;METZ MATTHEW V |
发明人 |
RACHMADY WILLY;RADOSAVLJEVIC MARKO;HUDAIT MANTU K.;METZ MATTHEW V. |
分类号 |
H01L29/12;H01L21/28 |
主分类号 |
H01L29/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|