| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems on a technique for improving performance of microphotofabrication using far ultraviolet light, particularly an ArF excimer laser having a wavelength of 193 nm, specifically to provide a negative resist composition which hardly suffers from pattern collapses during fine pattern formation, while exhibiting good resolution, and to provide a resist pattern-forming method using the same. <P>SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound containing a low-molecular-weight compound having an oxetane structure having a molecular weight of ≤2,000, and (C) a cationic photopolymerization initiator. The resist pattern-forming method using the same is also provided. <P>COPYRIGHT: (C)2010,JPO&INPIT |
