| 摘要 |
<P>PROBLEM TO BE SOLVED: To provided a zinc oxide-based light emitting diode with improved optical characteristics of a light emitting element. <P>SOLUTION: The zinc oxide-based light emitting diode includes an n-type semiconductor layer, a zinc oxide-based active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode electrically connected with the p-type semiconductor layer, a cathode electrically connected with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Thereby, no influence is exerted on an increase in resistance due to reduction of the thickness of the p-type semiconductor layer by forming the surface plasmon layer between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, and optical characteristics can be improved by inducing a resonance phenomenon between the surface plasmon layer and the active layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
