| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal film production apparatus promoting a film formation reaction in the production of a metal film, which has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film. Ž<P>SOLUTION: In the metal film production apparatus, a copper plate member 7 is etched with a Cl<SB>2</SB>gas plasma within a chamber 1 to form a precursor comprising a Cu component and a Cl<SB>2</SB>gas; and the temperatures of the copper plate member 7 and a substrate 3 and a difference between their temperature are controlled as predetermined, to deposit the Cu component of the precursor on the substrate 3, thereby forming a film of Cu. In this apparatus, Cl<SP>*</SP>is formed in an excitation chamber 25 of a passage 24 communicating with the interior of the chamber 1 to flow a Cl<SB>2</SB>gas, and the Cl<SP>*</SP>is supplied into the chamber 1 to withdraw a Cl<SB>2</SB>gas from the precursor adsorbed onto the substrate 3, thereby promoting a Cu film formation reaction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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