| 摘要 |
Disclosed is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes removing a part of an isolation layer from a semiconductor substrate such that an active area of the semiconductor substrate protrudes from the isolation layer; rounding edge portions of the active area; forming a gate insulating layer and a gate electrode on the active area; and forming source and drain impurity areas in the active area adjacent to sides of the gate electrode.
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