发明名称 REACTION TREATMENT DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a reaction treatment device which can accurately detect the temperatures of semiconductor heat generation elements, and can highly precisely control the temperatures. <P>SOLUTION: Provided is the reaction treatment device characterized in that a plurality of reaction regions, and a plurality of heating portions 13 disposed in the reaction regions, respectively, are disposed; each heating portion 13 is formed of a semiconductor element 20 and a semiconductor temperature detection element 21, and can independently be temperature-controlled; a heat-conducting region comprising a thin metal film is formed in the peripheral region of each temperature detection element 21; and a PCR region for performing a gene amplification reaction is included. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009254259(A) 申请公布日期 2009.11.05
申请号 JP20080105840 申请日期 2008.04.15
申请人 SONY CORP 发明人 MORIWAKI TOSHIKI;KANAI NOBUHIRO;ANAGUCHI TAKAKI
分类号 C12M1/00 主分类号 C12M1/00
代理机构 代理人
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