发明名称 SEMICONDUCTOR X-RAY DETECTING ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor X-ray detecting element, capable of improving the reliability and the yield. <P>SOLUTION: An n-surface electrode (3) is formed on a central part of one bottom surface of a substantially columnar-shaped semiconductor, having an i-layer(1) and a p-layer (5) surrounding the i-layer (1), and a p-surface electrode (7) is formed on the other bottom surface; the bottom surface from the periphery of the n-surface electrode (3) to the circumferential surface of the semiconductor is a tapered surface (8), lowering from the periphery of the n-surface electrode (3) to the circumferential surface of the semiconductor; even if the i-layer (1) spreads to the circumferential surface of the semiconductor to cause an i-layer exposed region at drifting, the i-layer exposed region is removed, because the tapered surface (8) is formed, so as to enable securing a structure with the entire circumferential surface of the i-layer (1) being embraced into a columnar shape by the p-layer (5). <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009259880(A) 申请公布日期 2009.11.05
申请号 JP20080104235 申请日期 2008.04.14
申请人 SHIMADZU CORP 发明人 YAMADA MINORU;SHIMADA MASARU;FUJII ATSUSHI
分类号 H01L31/09;G01T1/24 主分类号 H01L31/09
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