发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can enhance the stability of operation. SOLUTION: At the time of writing data for a memory transistor 5 in a semiconductor device 1, a writing voltage Vpp having a value (Vb+Vc1+Vc2) obtained by adding a first capacitor voltage Vc1 and a second capacitor voltage Vc2 to a fixed reference voltage Vb is applied to the control gate 13 of the memory transistor 5. The first capacitor voltage Vc1 and the second capacitor voltage Vc2 do not have temperature dependency. Consequently, the writing voltage Vpp applied to the control gate 13 of the memory transistor 5 is constant irrespective of a temperature. The stabilized writing of data for the memory transistor 5 (stabilized writing operation) can thereby be achieved. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009259912(A) 申请公布日期 2009.11.05
申请号 JP20080104896 申请日期 2008.04.14
申请人 ROHM CO LTD 发明人 MATSUMOTO YUJI
分类号 H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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