PLASMA CVD DEVICE, AND PLASMA CVD METHOD

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of manufacturing a semiconductor thin film having excellent film quality by reducing generation of SiH2radicals degrading power generation performance in silane plasma, and preventing drop of the temperature of a substrate during film formation. Ž

SOLUTION: This plasma CVD device is configured to include: a chamber 1; an exhaust device keeping the inside of the chamber 1 in a depressurized condition; a plurality of discharge electrodes 15a and 15b generating plasma in a material gas by being supplied with power; a power source applying A.C. or high-frequency voltages different in polarity to the respective discharge electrodes 15a and 15b adjacent to each other; material gas supply tubes 17 introducing the material gas between the discharge electrodes 15a and 15b adjacent to each other; and barrier ribs arranged from the exits of the material gas supply tubes 17 to a location which is located on the extension line in the material gas flow direction and at which a film formation object substrate 10 is arranged. Ž

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