| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the following problems: in an MOSFET achieving a bidirectional switching operation with a single chip, a source electrode and a back gate electrode are each formed into a one-layer structure, a region for arranging a source pad electrode and the back gate electrode outside an element region is necessary, and miniaturization of a chip size is not progressed; or the area of the element region is reduced relative to the chip size, and reduction of on-resistance and cost is limited. Ž<P>SOLUTION: A source electrode and a back gate electrode are each formed into a two-layer structure, and the source electrode and the back gate electrode in the second layer are each formed into a pad electrode. Accordingly, miniaturization of the chip size is achieved when the same element region area is kept. Alternatively, when the same chip size is kept, the element region area can be increased, and on-resistance can be reduced. The degree of freedom in a position for fixing an external connection means is improved, and versatility is improved. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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