发明名称 |
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME |
摘要 |
In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube ("CNT") material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the CNT seeding layer comprises silicon-germanium ("Si/Ge"), (b) planarizing a surface of the deposited CNT seeding layer, and (c) selectively fabricating CNT material on the CNT seeding layer; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided. |
申请公布号 |
WO2009134603(A2) |
申请公布日期 |
2009.11.05 |
申请号 |
WO2009US40131 |
申请日期 |
2009.04.09 |
申请人 |
SANDISK 3D, LLC;SCHRICKER, APRIL, D. |
发明人 |
SCHRICKER, APRIL, D. |
分类号 |
H01L27/10;H01L27/24 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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