发明名称 |
METHOD FOR REDUCING DEFECTS OF GATE OF CMOS DEVICES DURING CLEANING PROCESSES BY MODIFYING A PARASITIC PN JUNCTION |
摘要 |
By incorporating nitrogen into the P-doped regions and N-doped regions of the gate electrode material prior to patterning the gate electrode structure, yield losses due to reactive wet chemical cleaning processes may be significantly reduced.
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申请公布号 |
US2009273036(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20090397574 |
申请日期 |
2009.03.04 |
申请人 |
HORSTMANN MANFRED;JAVORKA PETER;WIECZOREK KARSTEN;RUTTLOFF KERSTIN |
发明人 |
HORSTMANN MANFRED;JAVORKA PETER;WIECZOREK KARSTEN;RUTTLOFF KERSTIN |
分类号 |
H01L27/092;H01L21/4763 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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