METHOD FOR MANUFACTURING HETEROSTRUCTURES

摘要

The invention relates to a method for manufacturing heterostructures for applications in the fields of electronics, optics or opto-electronics. This method is remarkable in that it consists of : - forming and/or depositing a silicon oxide Si?2 layer (3, 4) with a thickness of less than or equal to 25 nanometers on a donor substrate (1) and/or on a receiver substrate (2), - submitting this or these substrates (1, 2) to a treatment at a temperature comprised between 900°C and 1,200°C, under an atmosphere containing at least argon and/or hydrogen and no oxygen, in order to form in said silicon oxide layer (3, 4), trapping holes (30, 40), - bonding both substrates (1, 2), - carrying out annealing for reinforcing the bonding interface (5) at low temperature, said trapping holes (30, 40) being capable of retaining the gas species present at this interface, - transferring a portion (14) of the donor substrate (1), onto the receiver substrate (2).