发明名称 SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR COMPOSED BY USING THE SAME, AND METHOD FOR MANUFACTURING OF SEMICONDUCTOR THIN FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor thin film with high carrier mobility by a simple method. Ž<P>SOLUTION: The semiconductor thin film consisting of a metal complex represented by general formula (I) is composed. In the general formula (I), M is a group containing a transition metal atom, and L is a ligand. A<SP>1</SP>, A<SP>2</SP>, B<SP>1</SP>and B<SP>2</SP>may be identical or different, each of which is a hetero atom or a group containing the hetero atom. B<SP>1</SP>-Q(A<SP>1</SP>)(A<SP>2</SP>)-B<SP>2</SP>composes a conjugated system, m is an integer of 0 to 4, and n is a positive integer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009260157(A) 申请公布日期 2009.11.05
申请号 JP20080109749 申请日期 2008.04.21
申请人 NIPPON ZEON CO LTD 发明人 SUGAWARA TOMOO
分类号 H01L51/30;C08G79/00;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
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