发明名称 LASER ANNEALING METHOD, AND LASER ANNEALING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a laser annealing device which uniformize profiles. SOLUTION: The laser annealing device is provided with: an optical waveguide 11 which makes a plurality of laser beams emitted from a plurality of semiconductor laser elements 10 incident from one end and emits them from the other end; an optical system which generates a beam spot 22 in which the laser beams emitted from the optical waveguide 11 are condensed in the long and thin shape; and a beam profile detection part 16 which receives the beam spot 22 to detect distribution of light intensity values in the long and thin direction of the beam spot as profiles, and acquires the distribution of light intensity values when all the semiconductor laser elements 10 emit light, determines whether or not light intensity when only a semiconductor laser element 10 at a positional coordinate X<SB>a</SB>whose light intensity exceeds deviation is emitted is above or below the deviation at a specific coordinate, and uniformizes the light intensity distribution of the beam spot by performing control so as to increase or decrease output of the semiconductor laser element at a specific position according to this determination result. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009260133(A) 申请公布日期 2009.11.05
申请号 JP20080109191 申请日期 2008.04.18
申请人 HITACHI COMPUTER PERIPHERALS CO LTD 发明人 MATSUSHIMA HIDENORI;OGINO YOSHIAKI
分类号 H01L21/268;H01L21/20 主分类号 H01L21/268
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