| 摘要 |
PROBLEM TO BE SOLVED: To set an overcurrent detection value by the variation in breakdown resistance caused by the production variations. SOLUTION: An IGBT is structured in a main cell part MC so that a p<SP>+</SP>-type body layer 5 is terminated in an n<SP>+</SP>-type emitter region 4, and the IGBT is structured in a sense cell part SC so that p<SP>+</SP>-type body layer 5 is terminated in a channel region. This can set the overcurrent detection value by the variation in breakdown resistance caused by the production variations. In other words, the overcurrent protection function can be prioritized by setting the overcurrent detection value low for the device having the low breakdown tolerance caused by the production variations, and reversely, the false operation protection is prioritized to the overcurrent protection function by setting the overcurrent detection value higher for the device having the high breakdown tolerance caused by the production variations. COPYRIGHT: (C)2010,JPO&INPIT
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