| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a fin-type transistor increasing charge mobility in a channel region by effectively generating a strain in the channel region formed in a fin and its method for manufacturing. SOLUTION: The method for manufacturing the semiconductor device includes the steps of forming the fin and a predetermined film positioned at least either on or under the fin on a semiconductor substrate, forming a gate electrode so as to nip the fin along its both side faces via a gate insulating film, and expanding or contracting the predetermined film to apply a strain in a height direction of the fin onto a channel region positioned in an area of the fin nipped in the gate electrode. COPYRIGHT: (C)2010,JPO&INPIT
|
