| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate for growing a semiconductor crystal, on which a semiconductor layer with few crystal defects can be formed, and to provide a semiconductor crystal. Ž<P>SOLUTION: A protective film 14 made of silicon nitride having a film thickness of 100 nm is formed in an outer circumference portion of a substrate body 11 for growing a semiconductor crystal, the substrate made of Si having (111) plane direction of crystal. That is, the protective film 14 is formed on the side face 12 of the substrate body 11 for growing a semiconductor crystal and in a portion from the outermost circumference to 2 mm inside on the surface 13 of the substrate body 11 for growing a semiconductor crystal. Further, a buffer layer 21 made of AlN is formed in a region where the protective film 14 is not formed, on the surface 13 of the substrate body 11 for growing a semiconductor crystal, and a semiconductor layer 22 comprising a GaN crystal having a film thickness of 3 μm is formed on the buffer layer 21. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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