发明名称 |
CONTROL OF CARBON NANOSTRUCTURE GROWTH IN AN INTERCONNECT STRUCTURE |
摘要 |
An interconnect structure on a substrate is provided. The interconnect structure comprises electrically conductive interconnect elements on at least two interconnect levels on or above a substrate level. In the interconnect structure of the invention, at least one electrically conductive via connects a first interconnect element on one interconnect level or on the substrate level to a second interconnect element on a different interconnect level. The via extends in a via opening of a first dielectric layer and comprises an electrically conductive via material that contains electrically conductive cylindrical carbon nanostructures. At least one cover-layer segment reaches into a lateral extension of the via opening and defines a via aperture that is small enough to prevent a penetration of the carbon nanostructures through the via aperture. This structure enhances control of carbon nanostructure growth in a height direction during fabrication of the interconnect structure.
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申请公布号 |
US2009272565(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20070439919 |
申请日期 |
2007.08.29 |
申请人 |
GOSSET LAURENT;TORRES JOAQUIN |
发明人 |
GOSSET LAURENT;TORRES JOAQUIN |
分类号 |
H05K1/09;B05D5/12;H01L21/768 |
主分类号 |
H05K1/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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