METHOD FOR DEPOSITING OF ULTRA FINE GRAIN POLY SILICON THIN FILM

摘要

PURPOSE: A method for depositing a silicon thin film consisting of ultrafine grains is provided to supply source gas into a chamber where a substrate is loaded. CONSTITUTION: A method for depositing a silicon thin film consisting of ultrafine grains comprises the step of supplying source gas into a chamber where a substrate is loaded so as to deposit a silicon thin film. The source gas contains silicon-based gas, nitrogen-base gas, and phosphorous-based gas. When the temperature of a deposition process is 580°C ~ 650°C, the pressure of the deposition process is 100torr ~ 300torr. The silicone-based gas contains SiH4, Si2H6, and Si. The nitrogen-based gas contains NH3 and nitrogen. The phosphorous-based gas contains PH3 or phosphorous.