| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To attain increase in speed of a non-volatile memory with a small area. <P>SOLUTION: A low-integration and high-speed memory array 53, for example, represented by an SRAM is formed on a semiconductor substrate, and a high-integration and low-speed memory array 54 represented by a flash memory is formed on its upper layer. In the memory array 54, channels of each memory cell are formed in the vertical direction and capacity increase by the small area is attained. In the memory array 53 and the memory array 54, data lines, etc. are suitably shared in common, when writing is performed from the outside to the memory array 54, the writing is performed to the memory array 53, and transfer is performed from the memory array 53 to the memory array 54. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
