发明名称 PHOTOELECTRIC CONVERSION DEVICE AND RADIATION IMAGE DETECTING DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which can control deterioration in a manufacture yield and deterioration in reliability. <P>SOLUTION: A photoelectric conversion device 100 is arranged with a photoelectric conversion unit 10 and a transistor (an organic TFT) 20 in parallel with each other on a glass substrate 1 in a pixel array which arranges a pixel comprising the photoelectric conversion unit 10 and the transistor (the organic TFT) 20 in a matrix shape on the glass substrate 1. The photoelectric conversion unit 10 comprises a pixel electrode layer 12, a common electrode layer 13 opposed to the pixel electrode layer 12, and a photoelectric conversion film 11 sandwiched between the pixel electrode layer 12 and the common electrode layer 13. The photoelectric conversion film is composed of a bulk hetero junction film. The photoelectric conversion film 11 is formed continuous over the pixel electrode layers 12 of adjacent pixels. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009259978(A) 申请公布日期 2009.11.05
申请号 JP20080106137 申请日期 2008.04.15
申请人 KONICA MINOLTA HOLDINGS INC 发明人 MASUDA SATOSHI;IZUMI MICHIO
分类号 H01L27/146;G01T1/24;H01L27/14;H01L31/10 主分类号 H01L27/146
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