| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a thin film transistor (TFT). SOLUTION: The thin film transistor comprises a dielectric layer, an interfacial layer, and a semiconducting layer; the interfacial layer is between the dielectric layer and the semiconducting layer; the interfacial layer is formed from a silane; and the semiconducting layer comprises a semiconductor of Formula (I), wherein: R<SB>1</SB>and R<SB>2</SB>are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R<SB>3</SB>and R<SB>4</SB>are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. COPYRIGHT: (C)2010,JPO&INPIT
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