发明名称 |
SILICON STRUCTURE HAVING AN OPENING WHICH HAS A HIGH ASPECT RATIO, METHOD FOR MANUFACTURING THE SAME, SYSTEM FOR MANUFACTURING THE SAME, AND PROGRAM FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING ETCHING MASK FOR THE SILICON STRUCTURE |
摘要 |
Provided are a silicon structure having an opening which has a high aspect ratio and an etching mask for forming the silicon structure. A step of performing hole etching or trench etching of silicon so as to substantially expose a portion of at least a bottom surface of etched silicon and a step of forming a silicon oxide film by a CVD method on the silicon structure formed by the step of performing the hole etching or the trench etching are conducted. Thereafter, a step of exposing the formed silicon oxide film to a gas containing a hydrogen fluoride vapor is conducted. Further, the above-mentioned step of performing the hole etching or the trench etching is conducted again.
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申请公布号 |
US2009275202(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20070515726 |
申请日期 |
2007.09.19 |
申请人 |
TANAKA MASAHIKO;OISHI AKIMITSU |
发明人 |
TANAKA MASAHIKO;OISHI AKIMITSU |
分类号 |
H01L21/3065;C23C16/40;C23F1/00;G06F17/00;H01L21/316 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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